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Proceedings Paper

Ru-capped EUVL ML mask blank performance
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Paper Abstract

Using ruthenium (Ru) material as an extreme ultraviolet lithography (EUVL) mask blank multi-layer (ML) capping presents many advantages over silicon (Si) capping layer. Its high resistance to oxidation has been tested in EUVL optics. Ru capped ML mask blank also demonstrated very high etch selectivity during both mask absorber etch when the blank has no buffer layer and during buffer etch when the blank contains buffer layer. Due to higher EUV light absorption, Ru capping layer usually has to be much thinner than that of Si capping layer. As a result, long-term mask lifetime with thin Ru capping layer and its stability during multiple mask cleans becomes a concern. To address these concerns, we developed a process that improves Ru capped ML reflectivity for a given capping thickness. We further demonstrated the shelf lifetime stability of Ru capped ML mask blank and stability during multiple mask cleans. In this paper, we will discuss the detailed performance of Ru capped ML blanks, which includes mask blank reflectivity performance for different capping thickness, Ru capped ML mask blank shelf lifetime stability and cleaning stability performance. Mask patterning results using Ru capped ML blanks will also be presented.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557816
Show Author Affiliations
Pei-Yang Yan, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Eberhard Spiller, Spiller X-ray Optics (United States)
Paul B. Mirkarimi, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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