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Proceedings Paper

Advanced photomask repair technology for 65-nm lithography (1)
Author(s): Yasutoshi Itou; Yoshiyuki Tanaka; Nobuyuki Yoshioka; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Junichi Tashiro; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida; Toshiya Ozawa
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Paper Abstract

The 65nm photomasks have to meet tight specifications and improve the production yield due to high production cost. The 65nm optical lithography has two candidates, 157nm and 193nm, and we are developing two types of experimental photomask repair systems, FIB and EB, for the 65nm generation. We designed and developed FIB and EB beta systems. The platforms of beta systems consist of anti-vibration design to reduce outer disturbance for repair accuracy. Furthermore, we developed a new CPU control system, especially the new beam-scanning control system that makes it possible to control the beam position below nanometer order. These developments will suppress transmission loss and improve repair accuracy of the systems. We also adopt the 6-inch mask SMIF pod system and the CAD data linkage system that matches the EB mask data image with the SED image to search defects in photomasks with sophisticated patterns such as OPC patterns. We evaluate the EB repair process, and confirm that it generates carbon film, which has possibility to generate the same quality as that of FIB. Furthermore, we confirmed that EB and FIB repair systems were able to deposit carbon film and etch chrome, quartz, and MoSi. In this paper, we report the photomask defect repair experimental systems and the feasibility study on photomask defect repair for the 65nm generation.

Paper Details

Date Published: 20 August 2004
PDF: 12 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557789
Show Author Affiliations
Yasutoshi Itou, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yoshiyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Nobuyuki Yoshioka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Ryoji Hagiwara, SII NanoTechnology Inc. (Japan)
Haruo Takahashi, SII NanoTechnology Inc. (Japan)
Osamu Takaoka, SII NanoTechnology Inc. (Japan)
Junichi Tashiro, SII NanoTechnology Inc. (Japan)
Katsumi Suzuki, SII NanoTechnology Inc. (Japan)
Mamoru Okabe, SII NanoTechnology Inc. (Japan)
Syuichi Kikuchi, SII NanoTechnology Inc. (Japan)
Atsushi Uemoto, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Tatsuya Adachi, SII NanoTechnology Inc. (Japan)
Naoki Nishida, HOYA Corp. (Japan)
Toshiya Ozawa, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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