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Proceedings Paper

Demonstration of damage-free mask repair using electron beam-induced processes
Author(s): Ted Liang; Alan R. Stivers; Michael Penn; Dan Bald; Chetan Sethi; Volker Boegli; Michael Budach; Klaus Edinger; Petra Spies
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Paper Abstract

In this paper, we present the test results obtained from the first commercial electron beam mask repair tool. Repaired defect sites on chrome-on-glass masks are characterized with 193nm AIMS to quantify the edge placement precision as well as optical transmission loss. The electron beam mask repair tool is essentially based on a scanning electron microscope (SEM), therefore, it can be used for in-situ CD and defect metrology. E-beam for EUV mask defect repair is also discussed. These early results are very encouraging and demonstrate the basic advantages of electron beam mask repair as well as highlight the key challenge of charge control.

Paper Details

Date Published: 20 August 2004
PDF: 10 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557788
Show Author Affiliations
Ted Liang, Intel Corp. (United States)
Alan R. Stivers, Intel Corp. (United States)
Michael Penn, Intel Corp. (United States)
Dan Bald, Intel Corp. (United States)
Chetan Sethi, Intel Corp. (United States)
Volker Boegli, NaWoTec GmbH (Germany)
Michael Budach, NaWoTec GmbH (Germany)
Klaus Edinger, NaWoTec GmbH (Germany)
Petra Spies, NaWoTec GmbH (Germany)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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