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Proceedings Paper

Investigation of several materials as buffer layer candidates of EUVL mask
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Paper Abstract

An EUVL mask consists of a multilayer, a capping layer, a buffer layer, and an absorber layer formed on a glass substrate with a low coefficient of thermal expansion. The buffer layer protects the multilayer during the repair of absorber defects. In this study, Ru, Cr, and CrN were investigated as buffer layer candidates, and their etching selectivity with respect to a TaGeN absorber, DUV defect inspection contrast, and film stress were compared. Ru was found to be the most promising material of the three.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557770
Show Author Affiliations
Dongwan Kim, Association of Super-Advanced Electronics Technologies (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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