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Proceedings Paper

Actinic aerial image measurement for qualification of defect on 157-nm photomask
Author(s): Takashi Yasui; Iwao Higashikawa; Peter Kuschnerus; Wolfgang Degel; Klaus Boehm; Axel M. Zibold; Yuji Kobiyama; Jan-Peter Urbach; Christof M. Schilz; Silvio Teuber Semmler
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Paper Abstract

Measurement by AIMS is the final step of mask defect control, and its accuracy is the critical issue to make guaranty and improve the mask quality. AIMS157 has developed by Carl Zeiss SMS GmbH and is expected to make a contribution to accelerate the 157nm lithography technology development. AIMS157 has been challenging to solve 157nm specific optical issues with accuracy for 65nm node photomask specifications. This paper discusses the defect measurement by AIMS157. Evaluation using programmed defect mask, repeatability is analyzed changing the optical parameters. Static and dynamic measurements were evaluated and the result shows the improved accuracy. It shows the possibility to be applied on 65nm node and smaller feature size.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557762
Show Author Affiliations
Takashi Yasui, Semiconductor Leading Edge Technologies, Inc. (Japan)
Iwao Higashikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Peter Kuschnerus, Carl Zeiss Semiconductor Metrology Systems GmbH (Germany)
Wolfgang Degel, Carl Zeiss Semiconductor Metrology Systems GmbH (Germany)
Klaus Boehm, Carl Zeiss Semiconductor Metrology Systems GmbH (Germany)
Axel M. Zibold, Carl Zeiss Semiconductor Metrology Systems GmbH (Germany)
Yuji Kobiyama, Carl Zeiss Co. Ltd. (Japan)
Jan-Peter Urbach, International SEMATECH (United States)
Christof M. Schilz, Infineon Technologies AG (Germany)
Silvio Teuber Semmler, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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