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Proceedings Paper

Analysis of dose modulation method for fogging effect correction at 50-KeV e-beam system
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Paper Abstract

In this paper, the influence of dose modulation on CD trend by using electron beam exposure model has been investigated and simulated. To predict CD trend, we developed an analysis program, which shows the exposed energy profile and the corrected CD distribution in mask. First, it calculates the factor of fogging effect correction (Df) from pattern density distribution with the assumption that fogging effect depends on only pattern density. And then it calculates the modified dose for correcting both proximity and fogging effect. From dose distribution, the corrected CD is calculated analytically by using e-beam lithography model: see Figure 1. It can give a glance how the dose modulation method has an influence on the CD uniformity. Moreover, the result of global error correction such as side, radial error at the mask writing stage has been analyzed in this study.

Paper Details

Date Published: 20 August 2004
PDF: 6 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557757
Show Author Affiliations
Sung-Hoon Jang, Samsung Electronics Co., Ltd. (South Korea)
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Byoung-Sup Ahn, Samsung Electronics Co., Ltd. (South Korea)
Won-Tai Ki, Samsung Electronics Co., Ltd. (South Korea)
Ji-Hyeon Choi, Samsung Electronics Co., Ltd. (South Korea)
Sung-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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