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Proceedings Paper

CPL mask technology for sub-100-nm contact hole imaging
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Paper Abstract

Contact patterning for the 65nm device generation will be an exceedingly difficult task. The 2001 SIA roadmap lists the targeted contact size as 90nm with +/-10% CD control requirements of +/- 9nm1. Defectivity levels must also be below one failure per billion contacts for acceptable device yield. Difficulties in contact patterning are driven by the low depth of focus of isolated contacts and/or the high mask error factor (MEF) for dense contact arrays (in combination with expected reticle CD errors). Traditional contact lithography methods are not able to mitigate both these difficulties simultaneously. Inlaid metal trench patterning for the 65nm generation has similar lithographic difficulties though not to the extreme degree as contacts. We have investigated the use of CPL mask technology for ArF contact hole imaging for sub-100nm contact imaging. The author's activities have been focused on the design, fabrication and integration of imaging technology. In this paper the author's emphasis will be on issues related to pattern layout, mask fabrication and image processing.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557755
Show Author Affiliations
Bryan S. Kasprowicz, Photronics, Inc. (United States)
Willard E. Conley, Motorola, Inc. (United States)
Lloyd C. Litt, Motorola, Inc. (United States)
Douglas J. Van Den Broeke, ASML MaskTools, Inc. (United States)
Patrick K. Montgomery, Motorola, Inc. (United States)
Robert John Socha, Motorola, Inc. (United States)
Wei Wu, Motorola, Inc. (United States)
Kevin D. Lucas, Motorola, Inc. (United States)
Bernard J. Roman, Motorola, Inc. (United States)
J. Fung Chen, ASML MaskTools, Inc. (United States)
Kurt E. Wampler, ASML MaskTools, Inc. (United States)
Thomas L. Laidig, ASML MaskTools, Inc. (United States)
Christopher J. Progler, Photronics, Inc. (United States)
Michael E. Hathorn, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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