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Proceedings Paper

Optimization of the chromium-shielding attenuated phase shift mask for 157-nm lithography
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Paper Abstract

We evaluated the chromium-shielding attenuated phase shift mask (Cr-shield att-PSM) for the fabrication of fine hole patterns in 157-nm lithography. The transmittance of the phase shifter was set at 5% to achieve the best performance for 70- to 90-nm-diameter holes. Simulation and experimental results indicated that the optimum distance a between the pattern edge and the Cr-shield edge changed depending on the size and pitch of the holes. The optimum distance a for sub-70-nm-diameter holes was zero, which meant the binary mask gives the best depth of focus. In the case of 80-nm-diameter holes, the conventional att-PSM proved to be the best option for 1:1 hole patterns. For 1:2 hole patterns, the optimized distance a was 60 to 70 nm. For isolated hole patterns, the optimum distance a was 45 nm. After optimizing distance a, we confirmed the side-lobe control capability of the Cr-shield att-PSM through exposure experiments. The elimination of side-lobes greatly improved the resolution. Furthermore, we found that the mask linearity was improved through use of a Cr-shield att-PSM.

Paper Details

Date Published: 20 August 2004
PDF: 12 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557753
Show Author Affiliations
Eiji Kurose, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kunio Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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