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Proceedings Paper

Photomask with interior nonprinting phase-shifting window for printing small post structures
Author(s): Yung-Tin Chen
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Paper Abstract

We have developed a new mask technology to print small structures for three-dimensional integrated circuits. Aspects of the new technique provide for a novel photo mask for patterning small post features for an integrated circuit. The photo mask includes masked features having interior nonprinting windows. The interior nonprinting window is a phase shifter, while the area surrounding the masked features transmits light un-shifted. Thus any arrangement of features can be patterned with no phase conflict. In this paper, we will present a study of printing small post structures with pitch smaller than 0.26 μm by currently available KrF photolithography. Both alternating and chrome-less phase shifting masks are used to test the resolution limit. Resolution capability of various OAI techniques such as annular and quadrupole are analyzed by simulation and wafer printing images. This new photo mask with interior nonprinting phase-shifting window provides great improvement for resolving small post structures which having limited process window due to 2-D optical interference effects.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557752
Show Author Affiliations
Yung-Tin Chen, Matrix Semiconductor (United States)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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