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Proceedings Paper

Nanoscale dimensional focused ion beam repair of quartz defects on 90-nm node alternating aperture phase shift masks
Author(s): Tod E. Robinson; Anthony Graupera; Troy B. Morrison; Marcus Ramstein
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Paper Abstract

The effort to produce perfect dimension repairs of quartz bump defects on Alternating-Aperture Phase Shift Masks (AAPSM) has been brought to a new level with process developments to meet 90 nm technology node specifications. Decreasing photomask line and space dimensions pushes performance requirements for a mask repair system in terms of fine control in difficult to access structures on the mask surface. New repair strategies using a recently improved focused ion beam mask repair system for different defect types are discussed, along with their relative effectiveness. These strategies are then applied to the repair of full height extension and bridging defects in a line and space array. The role of quartz topography and its optical effects, Cr edge bias, and the combination of both strategies in a quartz bump repair are discussed. Additionally, effective process controls in repair are also discussed, along with analysis of metrology data received from a stylus nano-profilometer (SNP) system, and their relationship to potential imaging on the wafer by examination of AIMS data at a high numerical aperture. Several possible mask repair process flows are also reviewed in light of this work.

Paper Details

Date Published: 20 August 2004
PDF: 18 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557737
Show Author Affiliations
Tod E. Robinson, FEI Co. (United States)
Anthony Graupera, FEI Co. (United States)
Troy B. Morrison, FEI Co. (United States)
Marcus Ramstein, Advanced Mask Technology Center (Germany)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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