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Proceedings Paper

257-nm wavelength mask inspection for 65-nm node reticles
Author(s): Ryoji Yoshikawa; Hiroyuki Tanizaki; Tomohide Watanabe; Hiromu Inoue; Riki Ogawa; Satoshi Endo; Masami Ikeda; Yoichiro Takahashi; Hidehiro Watanabe
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Paper Abstract

We have developed a new photomask inspection method which has capability for inspecting 65nm technology node reticles using 257nm wavelength light source. This new method meets the requirement for the current mask inspection system using KrF inspection light source to be employed even in the fabrication of photomasks for 65nm technology node by the appearance of immersion technology using ArF wavelength. This paper discusses the detection capability of the 257nm wavelength inspection system for the defects on the 6% ArF attenuated phase shifting masks for 65nm node, using DSM based test pattern mask.

Paper Details

Date Published: 20 August 2004
PDF: 7 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557725
Show Author Affiliations
Ryoji Yoshikawa, Toshiba Corp. (Japan)
Hiroyuki Tanizaki, Toshiba Corp. (Japan)
Tomohide Watanabe, Toshiba Corp. (Japan)
Hiromu Inoue, Toshiba Corp. (Japan)
Riki Ogawa, Toshiba Corp. (Japan)
Satoshi Endo, NuFlare Technology, Inc. (Japan)
Masami Ikeda, NuFlare Technology, Inc. (Japan)
Yoichiro Takahashi, NuFlare Technology, Inc. (Japan)
Hidehiro Watanabe, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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