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Proceedings Paper

Decrease of chrome residue on MoSiON in embedded attenuated-PSM processing
Author(s): Yong-Dae Kim; Dae-Woo Kim; Dong-Seuk Lee; Pil-Jin Jang; Hyuk-Joo Kwon; Hyun-Jun Cho; Jin-Min Kim; Sang-Soo Choi
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Paper Abstract

In Embedded Attenuated PSMs(Phase Shift Masks), chrome residues on MoSiON, especially at the edge of a pattern, should be decreasing the phase-shift effect and it must be also causing CD(critical dimension) variations in a wafer-process. Chrome residues on MoSiON are well known being generated at second level lithography or according to performance of cleaning process before it. In this paper, we investgated the influence of treatment on Cr surface during MoSiON etch process using CF4 plasma and proposed the optimum treatment procedure to reduce the Cr residues originated form re-deposition of carbon-contained polymers in CF4 plasma.

Paper Details

Date Published: 20 August 2004
PDF: 7 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557721
Show Author Affiliations
Yong-Dae Kim, Photronics PKL Co., Ltd. (South Korea)
Dae-Woo Kim, Photronics PKL Co., Ltd. (South Korea)
Dong-Seuk Lee, Photronics PKL Co., Ltd. (South Korea)
Pil-Jin Jang, Photronics PKL Co., Ltd. (South Korea)
Hyuk-Joo Kwon, Photronics PKL Co., Ltd. (South Korea)
Hyun-Jun Cho, Photronics PKL Co., Ltd. (South Korea)
Jin-Min Kim, Photronics PKL Co., Ltd. (South Korea)
Sang-Soo Choi, Photronics PKL Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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