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Proceedings Paper

Alternating aperture phase shift mask process using e-beam lithography for the second level
Author(s): Corinna Koepernik; Joerg Butschke; Dirk Beyer; Mathias Irmscher; Bernd Leibold; Emmanuel Rausa; Rainer Plontke; Jason Plumhoff; Peter Voehringer
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Paper Abstract

The combination of conductive topcoat ESPACER Z300 and positive tone CAR FEP171 was investigated in detail for the second level patterning of Alternating Aperture Phase Shift Masks (AAPSM) using e-beam lithography. Chrome load variations between 2 and 50% with the corresponding deviation of the second level pattern, homogeneously and unevenly distributed on the mask, had no significant impact on placement and overlay accuracy. No clear defect increasing could be measured when applying ESPACER top coat. The quartz etch selectivity of FEP171 was identically with the widely accepted laser resist IP3600 and a good etch depth linearity was achieved down to 200nm feature size. Finally, the performance of the developed process has been demonstrated on a 65nm node device design.

Paper Details

Date Published: 20 August 2004
PDF: 10 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557719
Show Author Affiliations
Corinna Koepernik, IMS Chips (Germany)
Joerg Butschke, IMS Chips (Germany)
Dirk Beyer, Leica Microsystems Lithography GmbH (Germany)
Mathias Irmscher, IMS Chips (Germany)
Bernd Leibold, IMS Chips (Germany)
Emmanuel Rausa, Unaxis USA, Inc. (United States)
Rainer Plontke, Leica Microsystems Lithography GmbH (Germany)
Jason Plumhoff, Unaxis USA, Inc. (United States)
Peter Voehringer, IMS Chips (Germany)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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