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Proceedings Paper

Investigations on microloading effect: a parallel approach to PGSD (proximity gap suction development)
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Paper Abstract

The move towards smaller feature size continuously requires more accurate lithography models. Part of models improvement comes from a better understanding of involved physics and chemistry. State of the art models assume development rate to be dependent on level of de-protection of resist film while development kinetics is not taken into account. Model refinements consist in getting a good model of development rate versus de-protection level. Recent studies have put in evidence the importance and the influence of development kinetics. Based on this, a new development process concept has been developed: the Proximity Gap Suction Development (PGSD). This paper presents a parallel approach to PGSD using megasonic agitation in order to improve development process understanding. Analysis has been performed by focusing on microloading effect characterization, also taking into account Critical Dimension (CD) linearity, CD iso-dense bias. Interpretation and analysis were achieved through use of DOE techniques. Results are then discussed with respect to previous PGSD studies but also to current development models. It is believed that improvement of development process could be also achieved in wafer making through the use of high flow rate development techniques such as PGSD or megasonic development.

Paper Details

Date Published: 20 August 2004
PDF: 12 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557708
Show Author Affiliations
Daniel Courboin, DuPont Photomasks Korea Ltd. (South Korea)
Jong Woo Choi, DuPont Photomasks Korea Ltd. (South Korea)
S. H. Jung, DuPont Photomasks Korea Ltd. (South Korea)
Seung Hee Baek, DuPont Photomasks Korea Ltd. (South Korea)
Lee-Ju Kim, DuPont Photomasks Korea Ltd. (South Korea)
Chang Nam Ahn, DuPont Photomasks Korea Ltd. (South Korea)
Hong-Seok Kim, DuPont Photomasks Korea Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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