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Proceedings Paper

Mask patterning process using the negative tone chemically amplified resist TOK OEBR-CAN024
Author(s): Mathias Irmscher; Dirk Beyer; Joerg Butschke; Peter Hudek; Corinna Koepernik; Jason Plumhoff; Emmanuel Rausa; Mitsuru Sato; Peter Voehringer
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Paper Abstract

Optimized process parameters using the TOK OEBR-CAN024 resist for high chrome load patterning have been determined. A tight linearity tolerance for opaque and clear features, independent on the local pattern density, was the goal of our process integration work. For this purpose we evaluated a new correction method taking into account electron scattering and process influences. The method is based on matching of measured pattern geometry by iterative back-simulation using multiple Gauss and/or exponential functions. The obtained control function acts as input for the proximity correction software PROXECCO. Approaches with different pattern oversize and two Cr thicknesses were accomplished and the results have been reported. Isolated opaque and clear lines could be realized in a very tight linearity range. The increasing line width of small dense lines, induced by the etching process, could be corrected only partially.

Paper Details

Date Published: 20 August 2004
PDF: 12 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557686
Show Author Affiliations
Mathias Irmscher, IMS Chips (Germany)
Dirk Beyer, Leica Microsystems Lithography GmbH (Germany)
Joerg Butschke, IMS Chips (Germany)
Peter Hudek, Leica Microsystems Lithography GmbH (Germany)
Corinna Koepernik, IMS Chips (Germany)
Jason Plumhoff, Unaxis USA, Inc. (United States)
Emmanuel Rausa, Unaxis USA, Inc. (United States)
Mitsuru Sato, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Peter Voehringer, IMS Chips (Germany)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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