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Proceedings Paper

Investigation of Cr defect in high Cr load logic mask
Author(s): Ho-Yong Jung; Sung Jin Choi; Mun-Sik Kim; Dong Wook Lee; Junsik Lee; Oscar Han
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Paper Abstract

In this study, Cr defects resulted from high voltage E-beam writing in high Cr load Logic Mask were investigated. The Cr defect, which is a damage of anti-reflection layer on Cr, is mainly found in isolated Cr patterns of high Cr load Logic Mask. This defect appears under high voltage E-beam writing with high dose and dry etch process. High accelerating voltage and dose of E-beam writing decrease the thickness of remaining E-beam resist after developing. These phenomena are more significant in high Cr load Logic Mask consisted of isolated Cr patterns. Because the resist thickness of isolated Cr pattern is not enough for enduring dry etch process-induced damage, Cr surface is damaged during etching. Consequently, the Cr surface damage of high Cr load Logic Mask is related with voltage and dose of E-beam and dry etch process time. To prevent these defects, low accelerating voltage and dose of E-beam and low thickness of Cr layer to increase dry etch process margin are necessary.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557677
Show Author Affiliations
Ho-Yong Jung, Hynix Semiconductor Inc. (South Korea)
Sung Jin Choi, Hynix Semiconductor Inc. (South Korea)
Mun-Sik Kim, Hynix Semiconductor Inc. (South Korea)
Dong Wook Lee, Hynix Semiconductor Inc. (South Korea)
Junsik Lee, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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