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Proceedings Paper

Organic bistable devices with high switching voltage
Author(s): Haruo Kawakami; Hisato Kato; Keisuke Yamashiro; Nobuyuki Sekine; Masami Kuroda
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Paper Abstract

Electrical bistable device with high switching voltage is developed. The device structure is Al electrode layer/ metal dispersed layer/ organic material layer/ Au electrode layer, whose thickness is 60/30/80/60nm, respectively. The organic material is a type of bisquinomethane, 2, 5-bis {(3’, 5’-di(tert-butyl)-4’-oxocyclohexa-2’, 5’-dienylidene)-(4"-methoxyphenyl) methyl} thiophene (DODMT). The metal dispersed layer is formed by co-evaporation of DODMT and Al. With this structure, the switching voltage around 18V is attained. The device works even without the metal dispersed layer, in that case, with switching voltage of around 5V. The origin of bistability is estimated to be tunneling charge injection caused by charge accumulation at the Au/organic interface and subsequent enhancement of electrical field. Charge accumulation has also been observed in the metal dispersed layer. It would retard charge injection from Al electrode to DODMT layer, and consequently, to the Au/organic interface, and make the switching voltage high.

Paper Details

Date Published: 18 October 2004
PDF: 8 pages
Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); doi: 10.1117/12.557452
Show Author Affiliations
Haruo Kawakami, Fuji Electric Advanced Technology Co., Ltd. (Japan)
Hisato Kato, Fuji Electric Advanced Technology Co., Ltd. (Japan)
Keisuke Yamashiro, Fuji Electric Advanced Technology Co., Ltd. (Japan)
Nobuyuki Sekine, Fuji Electric Advanced Technology Co., Ltd. (Japan)
Masami Kuroda, Fuji Electric Advanced Technology Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5522:
Organic Field-Effect Transistors III
Ananth Dodabalapur, Editor(s)

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