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Proceedings Paper

F+, B+ ion implantation into GaAs multilayer heterostructures
Author(s): M. Tigishvili; N. Gapishvili; Revaz G. Melkadze; M. Ksaverieva; T. Khelashvili
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Paper Abstract

To develop reliable intercomponent insulation methods to fabricate devices and IC's based on GaAs multiplayer heterostructures the formation of high-resistivity regions in these structures by selective F+ and B+ ion implantation is studied. The implantation and the consequent annealing regimes are established.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557447
Show Author Affiliations
M. Tigishvili, Tbilisi State Univ. (Georgia)
N. Gapishvili, Tbilisi State Univ. (Georgia)
Revaz G. Melkadze, Tbilisi State Univ. (Georgia)
M. Ksaverieva, Tbilisi State Univ. (Georgia)
T. Khelashvili, Tbilisi State Univ. (Georgia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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