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Proceedings Paper

Features of electroforming in open sandwich-structures Si-SiO2-W for silicon of different types of conductivity
Author(s): Victor M. Mordvintsev; Sergey E. Kudrjavtsev; Valeriy L. Levin
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Paper Abstract

The results of experiments on research of electroforming processes in open “sandwich”-structures Si-SiO2-W (silicon - silicon dioxide - tungsten) with thickness of silicon dioxide about 20 nm are shown. The basic distinction for silicon of p- and n-types conductivity is marked: in the first case usual for electroforming N-type current-voltage characteristic and in the second S-type curve typical for electric breakdown with thermal instability are observed. The mechanisms of processes are discussed. The marked distinction is connected with the fact that in structures n-Si-SiO2-W the current is transported basically by electrons which dissociative attachment to molecules on a surface of an insulating slit leads to their destruction and conductive phase particles formation from them. In a current through structures p-Si-SiO2-W the electrons prevail only at initial moments of electroforming, in process of conductive medium accumulation their share falls by one - two orders, and the current is transported by holes, which cannot participate during formation of conductive phase particles.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557444
Show Author Affiliations
Victor M. Mordvintsev, Institute of Microelectronics and Informatics (Russia)
Sergey E. Kudrjavtsev, Institute of Microelectronics and Informatics (Russia)
Valeriy L. Levin, Institute of Microelectronics and Informatics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003

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