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Proceedings Paper

Possibility of silicon on insulator structure production using wet surface treatment (chemical assembling) and smart technique
Author(s): E. P. Prokop'ev; S. P. Timoshenkov; V. V. Kalugin; V. I. Grafutin
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Paper Abstract

The proposed lower methods of silicon surface formation using heat treatment in wet environment (including chemical surface assembling by the molecular deposition method) and the smart technique allow producing high-quality SOI-structures suitable for using in special ICs, semiconductor devices, micromechanical systems and sensors. The basic idea of the chemical surface assembling by the molecular deposition method that may be suitable for precision “synthesis of surface” of required composition and for surface modification consist in consecutive deposition of monolayers of structural units with given chemical composition.

Paper Details

Date Published: 28 May 2004
PDF: 7 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557441
Show Author Affiliations
E. P. Prokop'ev, Institute of Theoretical and Experimental Physics (Russia)
S. P. Timoshenkov, Moscow Institute of Electronic Technology (Russia)
V. V. Kalugin, Moscow Institute of Electronic Technology (Russia)
V. I. Grafutin, Institute of Theoretical and Experimental Physics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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