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Proceedings Paper

Investigation of dissolution process of implanted silicon dioxide
Author(s): Niaz I. Nurgazizov; Anastas A. Bukharaev; Roza M. Aminova; Denis V. Ovchinnikov
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Paper Abstract

This work contains the results of the investigation of dissolution of SiO2 after the implantation by Ar+ and C+ ions with the irradiation energy of several tens of keV. The measurements were carried out directly in the liquid in-situ with an atomic force microscope. The quantitative data about the distribution of the etching rate on the depth of the implanted layer were obtained. The change of the dissolution rate of SiO2 after implantation is due to with the change of the internal structure of the material. The results of the quantum-mechanical calculations of the internal structure of SiO2 before and after implantation are given.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557439
Show Author Affiliations
Niaz I. Nurgazizov, Zavoisky Physical-Technical Institute (Russia)
Anastas A. Bukharaev, Zavoisky Physical-Technical Institute (Russia)
Roza M. Aminova, Zavoisky Physical-Technical Institute (Russia)
Denis V. Ovchinnikov, Zavoisky Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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