Share Email Print

Proceedings Paper

Study of the oxidization of ns-SiNx:H thin films using FTIR phase modulated ellipsometry
Author(s): Jordi Sancho-Parramon; Salvador Bosch; Albert Pinyol; Enric Bertran; Adolf Canillas
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The time evolution of the optical properties of nanostructured silicon nitride (ns-SiNx:H) thin films was studied by FTIR phase-modulated ellipsometry. The samples were produced by RF-PECVD and ellipsometric measurements were performed after the deposition and at different time intervals in the spectral range between 950 and 3500 cm-1. The experimental data show an evolution from an initial not-oxidized state to a final oxidized state. The oxidation process of ns-SiNx:H films is modeled with two different approaches: i) assuming that the oxidation starts at the film surface and diffuses towards the substrate and ii) assuming a homogeneous oxidization through the entire volume of the film. The final best fitting of the data suggests that the oxidization occurs homogeneously in all the thickness of the film.

Paper Details

Date Published: 29 September 2004
PDF: 7 pages
Proc. SPIE 5527, Advances in Thin Film Coatings for Optical Applications, (29 September 2004); doi: 10.1117/12.557424
Show Author Affiliations
Jordi Sancho-Parramon, Univ. de Barcelona (Spain)
Salvador Bosch, Univ. de Barcelona (Spain)
Albert Pinyol, Univ. de Barcelona (Spain)
Enric Bertran, Univ. de Barcelona (Spain)
Adolf Canillas, Univ. de Barcelona (Spain)

Published in SPIE Proceedings Vol. 5527:
Advances in Thin Film Coatings for Optical Applications
Jennifer D. T. Kruschwitz; James B. Oliver, Editor(s)

© SPIE. Terms of Use
Back to Top