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Proceedings Paper

Ionic synthesis of silica-based glasses: prospect, simulation and applied aspects
Author(s): Sergey A. Krivelevich; Yuri. I. Denisenko; Andrey A. Tsyrulev
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Paper Abstract

The limitations attributed to SIMOX material synthesized with using of an ion implantation of oxygen are surveyed. A new theoretical approach on the base of the phase transitions theory of Ginsburg - Landau is advanced. It is shown that a basic improving of any variants of SIMOX process cannot be achieved by virtue of the fundamental physical reasons. A method of the ion synthesis of buried layers of silica-based glasses is offered. The results of simulation of formation of the buried glass-contained layer in the silicon substrate are represented. The method allows one to maintain the basic advantages of SIMOX process and to overcome some serious limitations inherent to the latter. On the base of this method a new approach to creating of MOS transistor for SOI/MOS logic gates is offered.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557301
Show Author Affiliations
Sergey A. Krivelevich, Institute of Microelectronics and Informatics (Russia)
Yuri. I. Denisenko, Institute of Microelectronics and Informatics (Russia)
Andrey A. Tsyrulev, Institute of Microelectronics and Informatics (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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