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Proceedings Paper

Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing
Author(s): Yakh'ya V. Fattakhov; Mansur F. Galyautdinov; Tat'yana N. L'vova; M. V. Zakharov; Il'dus B. Khaibullin
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Paper Abstract

Investigation of the dynamics of recrystallization and anisotropic local melting of implanted silicon under irradiation by pulses of incoherent light with different duration and power densities has been carried out. Dynamics of recrystallization of implanted silicon surface has been investigated in situ using a diffraction method. The method is based on the registering of the diffraction signal from a special periodic structure with high time and spatial resolution. This periodic structure is formed using special regimes of implantation of phosphorus and silicon ions in monocrystalline silicon with different fluencies.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557275
Show Author Affiliations
Yakh'ya V. Fattakhov, Kazan Physical-Technical Institute (Russia)
Mansur F. Galyautdinov, Kazan Physical-Technical Institute (Russia)
Tat'yana N. L'vova, Kazan Physical-Technical Institute (Russia)
M. V. Zakharov, Kazan Physical-Technical Institute (Russia)
Il'dus B. Khaibullin, Kazan Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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