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Proceedings Paper

Dry cleaning of fluorocarbon residues by atomic hydrogen flow
Author(s): E. Anishchenko; V. Diamant; Valerii A. Kagadei; E. Nefeyodtsev; Dmitry I. Proskurovsky; S. Romanenko
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Paper Abstract

Successful removal of fluorocarbon residues on silicon structure using neutral atomic hydrogen direct flow is reported. It has been stated that the treatment of samples in atomic hydrogen direct flow of density of 2x1015 at. cm-2 s-1 leads to decreasing of fluorocarbon residues concentration on the surface of structure by 5 orders of magnitude. The concentration of fluorocarbon residues after AH treatment is at the hum level characteristic for the absolutely clean surface exposed in atmosphere air. Removal fluorocarbon residues is being realized at temperature of 20-100 ° both from the planar surface of a structure and from the sidewalls and bottom of the contact holes with diameter of 0.3-0.25 μm and depth of 1.2-1 μm. The time of treatment as 2 min is quite sufficient for fluorocarbon residues removal.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557271
Show Author Affiliations
E. Anishchenko, Research Institute of Semiconductor Devices (Russia)
V. Diamant, Atomic Hydrogen Technologies Ltd. (Israel)
Valerii A. Kagadei, Research Institute of Semiconductor Devices (Russia)
E. Nefeyodtsev, Institute of High Current Electronics (Russia)
Dmitry I. Proskurovsky, Institute of High Current Electronics (Russia)
S. Romanenko, Institute of High Current Electronics (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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