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Proceedings Paper

Dependence of EUV emission properties on laser wavelength
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Paper Abstract

Extreme ultraviolet (EUV) emission from laser produced tin plasma was investigated for 1064, 532 and 266 nm laser wavelengths. The EUV conversion with tin target tends to be high for shorter laser wavelength and is optimized at 4-5x1010 W/cm2 for 1064 and 532 nm. The EUV emission exhibits laser wavelength dependence in terms of angular distribution and structures of emission spectra. It is found that spectra for 532 nm and 266 nm showed spectral dips at around 13.5 nm and these dips are well replicated in computer simulations. Both the angular distribution together with the spectral dips may suggest existence of opaque plasmas surrounding the EUV emission region.

Paper Details

Date Published: 20 September 2004
PDF: 6 pages
Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.557207
Show Author Affiliations
Michiteru Yamaura, Osaka Univ. (Japan)
Shigeaki Uchida, Osaka Univ. (Japan)
Atsushi Sunahara, Osaka Univ. (Japan)
Yoshinori Shimada, Osaka Univ. (Japan)
Kazuhisa Hashimoto, Osaka Univ. (Japan)
Chiyoe Yamanaka, Osaka Univ. (Japan)
Keisuke Shigemori, Osaka Univ. (Japan)
Shinsuke Fujioka, Osaka Univ. (Japan)
Tomoharu Okuno, Osaka Univ. (Japan)
Keiji Nagai, Osaka Univ. (Japan)
Takayoshi Norimatsu, Osaka Univ. (Japan)
Hiroaki Nishimura, Osaka Univ. (Japan)
Katsunobu Nishihara, Osaka Univ. (Japan)
Noriaki Miyanaga, Osaka Univ. (Japan)
Yasukazu Izawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 5448:
High-Power Laser Ablation V
Claude R. Phipps, Editor(s)

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