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Proceedings Paper

Effects of the film thickness and foreign element addition on the crystallization kinetics and optical properties of eutectic Sb70Te30 phase change recording film
Author(s): Yung-Sung Hsu; Yung-Chiun Her; Shun-Te Cheng; Song-Yeu Tsai
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Paper Abstract

The effects of the film thickness and foreign element addition on the crystallization kinetics and optical properties of eutectic Sb70Te30 phase change recording film have been studied. The crystallization temperature and activation energy for crystallization of the non-doped Sb70Te30 recording films were decreased from 161 to 145, 144, 141, and 125°C, and from 3.0 to 2.6, 2.3, 2.0, and 1.9 eV/atom, respectively, when the thickness was increased from 15 to 20, 25, 30 and 100 nm. For the Ag-doped Sb70Te30 recording film of 20 nm in thickness, the crystallization temperature was found to increase from 145 to 146 and 156°C, and the activation energy was found to decrease from 2.6 to 2.5 and 2.1 eV/atom, respectively, as the concentration of Ag was increased from 0 to 3.8 and 11.8 at%, respectively. Meanwhile, the crystallization temperature and activation energy of the 20-nm-thick In-doped Sb70Te30 film was found to increase from 145 to 153 and 168°C, and increased from 2.6 to 2.8 and 3.4 eV/atom, respectively, as the concentration of In was increased from 0 to 1.4 and 4.8 at%.

Paper Details

Date Published: 9 September 2004
PDF: 5 pages
Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); doi: 10.1117/12.557142
Show Author Affiliations
Yung-Sung Hsu, National Chung Hsing Univ. (Taiwan)
Yung-Chiun Her, National Chung Hsing Univ. (Taiwan)
Shun-Te Cheng, Industrial Technology Research Institute (Taiwan)
Song-Yeu Tsai, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 5380:
Optical Data Storage 2004
B. V. K. Vijaya Kumar; Hiromichi Kobori, Editor(s)

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