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Proceedings Paper

GaGeSb alloys for high-speed reversible phase-change optical recording
Author(s): Dimitre Z. Dimitrov; Cvetanka Babeva; Shun-Te Cheng; Wei-Chih Hsu; Ming-Hsun Hsieh; Song-Yeu Tsai
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Paper Abstract

New Ga doped GeSb based phase-change materials are investigated. These materials possess good optical contrast at short wavelengths. Crystallization temperature increasing and grain size refinement are obtained by addition of Ga. More than 50 dB CNR and 25 dB erasability are measured in disks using blue laser.

Paper Details

Date Published: 9 September 2004
PDF: 6 pages
Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); doi: 10.1117/12.557103
Show Author Affiliations
Dimitre Z. Dimitrov, Industrial Technology Research Institute (Taiwan)
Cvetanka Babeva, Central Lab. of Photoprocesses (Bulgaria)
Shun-Te Cheng, Industrial Technology Research Institute (Taiwan)
Wei-Chih Hsu, Industrial Technology Research Institute (Taiwan)
Ming-Hsun Hsieh, Industrial Technology Research Institute (Taiwan)
Song-Yeu Tsai, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 5380:
Optical Data Storage 2004
B. V. K. Vijaya Kumar; Hiromichi Kobori, Editor(s)

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