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Proceedings Paper

Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation
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Paper Abstract

Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb2Te3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.

Paper Details

Date Published: 9 September 2004
PDF: 9 pages
Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); doi: 10.1117/12.557067
Show Author Affiliations
Kazuo Watabe, Toshiba Corp. (Japan)
Pavel Polynkin, Optical Sciences Ctr./Univ. of Arizona (United States)
Masud Mansuripur, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 5380:
Optical Data Storage 2004
B. V. K. Vijaya Kumar; Hiromichi Kobori, Editor(s)

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