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Proceedings Paper

Modeling of crystallization activation energy for GeTe-Sb2Te3-based phase change materials
Author(s): Zhaohui Fan; Lisha Wang; David E. Laughlin
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Paper Abstract

In this paper, we modeled the activation energies of GeSbTe type of phase change materials. This model is based on the analysis of the atomic bonding types in the amorphous state and the crystalline state. Both the bond numbers and bond energies were used to calculate the crystallization activation energies. The calculated crystallization activation energies of the as-deposited amorphous states match the experimental data in the literature. We also estimated the crystallization activation energies of the melt-quenched amorphous states for different GeTe-Sb2Te3 phase change materials. The results show that the activation energies of the melt-quenched amorphous state are 0.21~0.48 eV lower than those of the as-deposited amorphous state. This might explain the difference of the crystallization behaviors between the as-deposited and the melt-quenched amorphous states.

Paper Details

Date Published: 9 September 2004
PDF: 8 pages
Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); doi: 10.1117/12.556747
Show Author Affiliations
Zhaohui Fan, Carnegie Mellon Univ. (United States)
Lisha Wang, Carnegie Mellon Univ. (United States)
David E. Laughlin, Carnegie Mellon Univ. (United States)

Published in SPIE Proceedings Vol. 5380:
Optical Data Storage 2004
B. V. K. Vijaya Kumar; Hiromichi Kobori, Editor(s)

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