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Proceedings Paper

Contact hole application for lithography process development using the Opti-Probe three-dimensional RT/CD technology
Author(s): Zhiming Jiang; Osman Sorkhabi; Hanyou Chu; XueLong Cao; Guangwei Li; Youxian Wen; Jon L. Opsal; Yia-Chung Chang
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Paper Abstract

This paper presents measurement results of the 3-D contact hole profiles using RT/CD technology for various diameter-to-space (D/S) ratios and film stacks. The key controlling parameters (hole depth, diameter, sidewall angle, and hole openness, etc.) for lithography processing of contacts and vias were studied in terms of measurement sensitivity on samples with different pitches and D/S ratios and film stacks. Good correlation (R2 ~ 0.99) between CD-SEM and RT/CD was obtained for the sample structures. The static and dynamic measurement stability of contact diameter and contact depth was better than 1 nm using simple profile modeling.

Paper Details

Date Published: 24 May 2004
PDF: 10 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.556587
Show Author Affiliations
Zhiming Jiang, Therma-Wave, Inc. (United States)
Osman Sorkhabi, Therma-Wave, Inc. (United States)
Hanyou Chu, Therma-Wave, Inc. (United States)
XueLong Cao, Therma-Wave, Inc. (United States)
Guangwei Li, Therma-Wave, Inc. (United States)
Youxian Wen, Therma-Wave, Inc. (United States)
Jon L. Opsal, Therma-Wave, Inc. (United States)
Yia-Chung Chang, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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