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Proceedings Paper

Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
Author(s): Patrick Naulleau; Kenneth A. Goldberg; Erik H. Anderson; Kevin Bradley; Rene Delano; Paul Denham; Bob Gunion; Bruce Harteneck; Brian Hoef; Hanjing Huang; Keith Jackson; Gideon Jones; Drew Kemp; James Alexander Liddle; Ron Oort; Al Rawlins; Senajith Rekawa; Farhad Salmassi; Ron Tackaberry; Carl Chung; Layton Hale; Don Phillion; Gary Sommargren; John Taylor
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Paper Abstract

The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time. As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.

Paper Details

Date Published: 20 May 2004
PDF: 11 pages
Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); doi: 10.1117/12.556538
Show Author Affiliations
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Erik H. Anderson, Lawrence Berkeley National Lab. (United States)
Kevin Bradley, Lawrence Berkeley National Lab. (United States)
Rene Delano, Lawrence Berkeley National Lab. (United States)
Paul Denham, Lawrence Berkeley National Lab. (United States)
Bob Gunion, Lawrence Berkeley National Lab. (United States)
Bruce Harteneck, Lawrence Berkeley National Lab. (United States)
Brian Hoef, Lawrence Berkeley National Lab. (United States)
Hanjing Huang, Lawrence Berkeley National Lab. (United States)
Keith Jackson, Lawrence Berkeley National Lab. (United States)
Gideon Jones, Lawrence Berkeley National Lab. (United States)
Drew Kemp, Lawrence Berkeley National Lab. (United States)
James Alexander Liddle, Lawrence Berkeley National Lab. (United States)
Ron Oort, Lawrence Berkeley National Lab. (United States)
Al Rawlins, Lawrence Berkeley National Lab. (United States)
Senajith Rekawa, Lawrence Berkeley National Lab. (United States)
Farhad Salmassi, Lawrence Berkeley National Lab. (United States)
Ron Tackaberry, Lawrence Berkeley National Lab. (United States)
Carl Chung, Lawrence Livermore National Lab. (United States)
Layton Hale, Lawrence Livermore National Lab. (United States)
Don Phillion, Lawrence Livermore National Lab. (United States)
Gary Sommargren, Lawrence Livermore National Lab. (United States)
John Taylor, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 5374:
Emerging Lithographic Technologies VIII
R. Scott Mackay, Editor(s)

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