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Proceedings Paper

Crystallization kinetics and recording characteristics of Cu/a-Si bilayer recording film for write-once Blu ray disk
Author(s): Yung-Chiun Her; Chun-Lin Wu
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Paper Abstract

The crystallization kinetics and recording characteristics of the Cu/a-Si bilayer recording film have been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Si with a thin Cu metal layer were reduced to about 485°C and 3.3±0.1 eV, respectively, indicating that inserting a thin Cu underlayer could effectively reduce the crystallization temperature and activation energy for crystallization of a-Si. The reaction exponent was determined to be around 1.8, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of the grain growth process. This is consistent with the hypothesis that the Cu3Si precipitates act as the nucleation sites for the subsequent crystallization of a-Si in the Cu/a-Si bilayer recording film. Additionally, the maximum data-transfer-rates that can be achieved by the Cu/a-Si bilayer recording film at recording powers of 6, 8, and 10 mW were estimated to be about 23, 46, and 223 Mb/s, respectively.

Paper Details

Date Published: 9 September 2004
PDF: 5 pages
Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); doi: 10.1117/12.556275
Show Author Affiliations
Yung-Chiun Her, National Chung Hsing Univ. (Taiwan)
Chun-Lin Wu, National Chung Hsing Univ. (Taiwan)


Published in SPIE Proceedings Vol. 5380:
Optical Data Storage 2004
B. V. K. Vijaya Kumar; Hiromichi Kobori, Editor(s)

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