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Proceedings Paper

The noise behavior of JFET transistors from room temperature down to 80 k
Author(s): C. Arnaboldi; Giuliano Boella; E. Panzeri; Gianluigi Pessina
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Paper Abstract

We have designed and built a very simple and efficient instrument that allows performing very accurate noise measurements of transistors at any biasing conditions, from room temperature down to cryogenic temperatures. This way a study has been possible of the noise behavior of Silicon JFETs for both the low frequency and the high frequency white noise. We explored a wide range of biasing conditions, starting from a power dissipation of only 2 μW up to 1 μW. Concerning white noise, evidence was found for the hot electron effect: it was negligible at small power dissipation and evident at large power. An experimental study was made of the low frequency noise. Its interpretation was developed based on the Generation Recombination theory. Many JFET samples were investigated, made with different technologies and having different gate area.

Paper Details

Date Published: 25 May 2004
PDF: 10 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.555775
Show Author Affiliations
C. Arnaboldi, Istituto Nazionale di Fisica Nucleare (Italy)
Giuliano Boella, Istituto Nazionale di Fisica Nucleare (Italy)
E. Panzeri, Istituto Nazionale di Fisica Nucleare (Italy)
Gianluigi Pessina, Istituto Nazionale di Fisica Nucleare (Italy)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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