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Proceedings Paper

Fundamental physics and practical realization of mid-infrared photodetectors
Author(s): Anthony Krier; Parthasarathi Chakrabarti; Honghai Gao; Y. Mao; Xing-Liang Huang; Victor V. Sherstnev
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Paper Abstract

The fabrication and characterization of heterojunction phtodiodes for room temperature operation in the mid-infrared (2-5 μm) spectral range is described. Liquid phase epitaxy was employed to fabricate two different devices containing In0.97Ga0.03As and InAs0.89Sb0.11 active regions appropriate for phtodetection at 3.3 μm and 4.6 μm, corresponding to the absorption bands of methane and carbon monoxide. Basic detector characteristics have been measured and were found to compare favourbly with other available detectors in this wavelength range. A simple analystical model was developed to help design and study the corresponding device physics governing the performance of the detectors and was found to give good agreement with the experimentally measured values.

Paper Details

Date Published: 22 October 2004
PDF: 13 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.555684
Show Author Affiliations
Anthony Krier, Lancaster Univ. (United Kingdom)
Parthasarathi Chakrabarti, Banaras Hindu Univ. (India)
Honghai Gao, Lancaster Univ. (United Kingdom)
Y. Mao, Lancaster Univ. (United Kingdom)
Xing-Liang Huang, Lancaster Univ. (United Kingdom)
Victor V. Sherstnev, Lancaster Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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