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Proceedings Paper

Application of the phase-field model to the p-n junction: comparison with the conventional sharp-interface model
Author(s): Dmitri I. Popov
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Paper Abstract

A one-dimensional phase-field method was developed that allowed us to observe the evolution of electric potential, charge density, concentration of holes and electrons, as well as distribution of temperature and temperature-related effects across the p-n junction of a model semiconductor diode.

Paper Details

Date Published: 5 April 2004
PDF: 4 pages
Proc. SPIE 5400, Seventh International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 April 2004); doi: 10.1117/12.555371
Show Author Affiliations
Dmitri I. Popov, SUNY/Brockport (United States)


Published in SPIE Proceedings Vol. 5400:
Seventh International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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