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Proceedings Paper

Wide-FOV FPAs for a shipboard distributed aperture system
Author(s): David J. Gulbransen; Stephen H. Black; A. C. Childs; Christopher L. Fletcher; Scott M. Johnson; William A. Radford; Gregory M. Venzor; J. P. Sienicki; A. D. Thompson; J. H. Griffith; Aimee A. Buell; M. F. Vilela; Michael D. Newton; Edward H. Takken; James R. Waterman; Keith A. Krapels
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Paper Abstract

The Navy faces an ever evolving threat scenario, ranging from sub-sonic sea skimming cruise missiles to newer, unconventional threats such as that experienced by the USS Cole. Next generation naval technology development programs are developing “stealthy” ships by reducing a ships radar cross section and controlling electromagnetic emissions. To meet these threat challenges in an evolving platform environment, ONR has initiated the “Wide Aspect MWIR Array” program. In support of this program, Raytheon Vision Systems (RVS) is developing a 2560 X 512 element focal plane array, utilizing Molecular Beam Epitaxially grown HgCdTe on silicon detector technology. RVS will package this array in a sealed Dewar with a long-life cryogenic cooler, electronics, on-gimbal power conditioning and a thermal reference source. The resulting sub system will be a component in a multi camera distributed aperture situation awareness sensor, which will provide continuous surveillance of the horizon. We will report on the utilization of MWIR Molecular Beam Epitaxial HgCdTe on Silicon material for fabrication of the detector arrays. Detector arrays fabricated on HgCdTe/Si have no thermal expansion mismatch relative to the readout integrated circuits. Therefore large-area focal plane arrays (FPAs) can be developed without concern for thermal cycle reliability. In addition these devices do not require thinning or reticulation like InSb FPAs to yield the high levels of Modulation Transfer Function (MTF) required by a missile warning sensor. HgCdTe/Si wafers can be scaled up to much larger sizes than the HgCdTe/CdZnTe wafers. Four-inch-diameter HgCdTe/Si wafers are currently being produced and are significantly larger than the standard 1.7 inch x 2.6 inch HgCdTe/CdTe wafers. The use of Si substrates also enables the use of automated semiconductor fabrication equipment.

Paper Details

Date Published: 30 August 2004
PDF: 12 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.555122
Show Author Affiliations
David J. Gulbransen, Raytheon Vision Systems (United States)
Stephen H. Black, Raytheon Vision Systems (United States)
A. C. Childs, Raytheon Vision Systems (United States)
Christopher L. Fletcher, Raytheon Vision Systems (United States)
Scott M. Johnson, Raytheon Vision Systems (United States)
William A. Radford, Raytheon Vision Systems (United States)
Gregory M. Venzor, Raytheon Vision Systems (United States)
J. P. Sienicki, Raytheon Vision Systems (United States)
A. D. Thompson, Raytheon Vision Systems (United States)
J. H. Griffith, Raytheon Vision Systems (United States)
Aimee A. Buell, Raytheon Vision Systems (United States)
M. F. Vilela, Raytheon Vision Systems (United States)
Michael D. Newton, Raytheon Vision Systems (United States)
Edward H. Takken, Naval Research Lab. (United States)
James R. Waterman, Naval Research Lab. (United States)
Keith A. Krapels, Office of Naval Research (United States)

Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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