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Proceedings Paper

Silicon-based light emission after ion implantation
Author(s): Martin Kittler; T. Arguirov; W. Seifert
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Paper Abstract

Photoluminescence and electroluminescence of boron and phosphorus implanted silicon have been studied as a function of temperature. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. An increase of the band-to-band luminescence intensity by one order of magnitude is observed upon rising the temperature from 80 K to 300 K. Defect luminescence arising from the implanted layer is found only at low temperatures. The remarkable band-to-band luminescence is attributed to a high Shockley-Read-Hall lifetime caused by the gettering action of implantation defects.

Paper Details

Date Published: 1 July 2004
PDF: 8 pages
Proc. SPIE 5357, Optoelectronic Integration on Silicon, (1 July 2004); doi: 10.1117/12.553871
Show Author Affiliations
Martin Kittler, IHP Microelectronics (Germany)
T. Arguirov, Brandenburgische Technische Univ. Cottbus (Germany)
W. Seifert, IHP Microelectronics/Brandenburgische Technische Univ. Cottbus Joint Lab. (Germany)


Published in SPIE Proceedings Vol. 5357:
Optoelectronic Integration on Silicon
David J. Robbins; Ghassan E. Jabbour, Editor(s)

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