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Proceedings Paper

Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopy
Author(s): Yu. E. Gagarin; M. A. Stepovich
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Paper Abstract

The methods of mathematical modeling have been applied to study possibilities of using confluence analysis for interval estimation of diffusion lengths of minority charge carriers in semiconductors. Confluence analysis has been realized for direct-gap semiconductors at different measurands errors of electron beam energies characteristic of real experiment.

Paper Details

Date Published: 1 March 2004
PDF: 7 pages
Proc. SPIE 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 March 2004); doi: 10.1117/12.552218
Show Author Affiliations
Yu. E. Gagarin, Bauman Moscow State Technical Univ. (Russia)
M. A. Stepovich, Bauman Moscow State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 5398:
Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics
Anatoly M. Filachev, Editor(s)

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