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Proceedings Paper

Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam
Author(s): M. A. Stepovich; A. G. Khokhlov; M. G. Snopova
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Paper Abstract

The calculation method of distributions of minority charge carriers generated in the two-layer semiconductor by a wide electron beam with energies 5 - 30 keV based on using the model of independent sources is described.

Paper Details

Date Published: 1 March 2004
PDF: 7 pages
Proc. SPIE 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 March 2004); doi: 10.1117/12.552175
Show Author Affiliations
M. A. Stepovich, Bauman Moscow State Technical Univ. (Russia)
A. G. Khokhlov, Bauman Moscow State Technical Univ. (Russia)
M. G. Snopova, Bauman Moscow State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 5398:
Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics
Anatoly M. Filachev, Editor(s)

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