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Proceedings Paper

Fabrication and characterization of optical planar waveguides activated by erbium ions for 1.5-μm applications
Author(s): Alessandro Chiasera; Maurizio Ferrari; Luca Zampedri; Maurizio Mattarelli; Maurizio Montagna; Herve Portales; Cristiana Tosello; Sandra Dire; Stefano Pelli; Giancarlo C. Righini
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Paper Abstract

Recent results obtained for SiO2-HfO2: Er3+ and SiO2-TiO2: Er3+-Yb3+ waveguides are presented. (100-x)SiO2-xHfO2 (x = 10, 20, 30, 40 mol) planar waveguides, doped with 0.01 and 0.3 mol % Er3+ ions were prepared by sol-gel route, using dip-coating deposition on v-SiO2 substrates. The waveguides were characterized by m-line, Raman and photoluminescence spectroscopy. The spectral shape of the band assigned to the 4I13/2->4I15/2 transition does not change practically with the hafnium and erbium content. The 4I13/2 level decay curves present a single-exponential profile, with a lifetime between 5.5 and 7.1 ms, for the 0.3 mol% doped samples, and between 8.5 and 6.6 ms for the 0.01 mol% doped samples. The SiO2-TiO2: Er3+-Yb3+ waveguides were prepared by rf-sputtering technique. All waveguides were single-mode at 1550 nm. The losses, for the TE0 mode, were evaluated at 632.8 and 1300 nm and an attenuation coefficient equal or lower than 0.2 dB/cm was measured both at 632.8 nm and 1300 nm. The emission of 4I13/2->4I15/2 of Er3+ ion transition was observed upon excitation in the TE0 mode at 981 and 514.5 nm. Back energy transfer from Er3+ to Yb3+ was demonstrated by measurement of Yb3+ emission upon Er3+ excitation at 514.5 nm. Photoluminescence excitation spectroscopy was used to obtain information about the effective excitation efficiency of Er3+ ions by co-doping with Yb3+ ions.

Paper Details

Date Published: 18 August 2004
PDF: 11 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.549920
Show Author Affiliations
Alessandro Chiasera, Istituto di Fotonica e Nanotecnologie/CNR (Italy)
Univ. degli Studi di Trento (Italy)
Maurizio Ferrari, Istituto di Fotonica e Nanotecnologie/CNR (Italy)
Univ. degli Studi di Trento (Italy)
Luca Zampedri, Istituto di Fotonica e Nanotecnologie/CNR (Italy)
Univ. degli Studi di Trento (Italy)
Maurizio Mattarelli, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Maurizio Montagna, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Herve Portales, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Cristiana Tosello, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Sandra Dire, Univ. degli Studi di Trento (Italy)
Stefano Pelli, Istituto di Fisica Applicata Nello Carrara/CNR (Italy)
Giancarlo C. Righini, Istituto di Fisica Applicata Nello Carrara/CNR (Italy)


Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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