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Proceedings Paper

Source collection optics for EUV lithography
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Paper Abstract

Next generation lithography is likely to deploy extreme UV (EUV) light at 13.5 nm wavelength for key manufacturing processes. Currently, all promising EUV light source concepts require efficient light collection optics in order to deliver sufficeintly high light power for profitable chip production. With densely nested Wolter-Type 1 reflective optics we designed, and fabricated such optics. In this paper we report on the latest achievements in design, development and on our first at wavelength testing results of such collection optics.

Paper Details

Date Published: 18 October 2004
PDF: 12 pages
Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, (18 October 2004); doi: 10.1117/12.549409
Show Author Affiliations
Piotr Marczuk, Carl Zeiss Laser Optics GmbH (Germany)
Wilhelm Egle, Carl Zeiss Laser Optics GmbH (Germany)


Published in SPIE Proceedings Vol. 5533:
Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II
Ali M. Khounsary; Udo Dinger; Kazuya Ota, Editor(s)

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