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Proceedings Paper

Pixel scaling for SOI-diode uncooled infrared focal plane arrays
Author(s): Yasuhiro Kosasayama; Takaki Sugino; Yoshiyuki Nakaki; Yoshio Fujii; Hiromoto Inoue; Hirofumi Yagi; Hisatoshi Hata; Masashi Ueno; Munehisa Takeda; Masafumi Kimata
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Paper Abstract

Pixel scaling for SOI diode uncooled infrared focal plane arrays (IRFPAs) was investigated in order to achieve the realization of small size and low cost IRFPAs. Since the SOI diode pixel has two different layers -- one for the temperature sensor and the thermal isolation structure, and the other for the infrared absorption structure -- each layer can be independently designed. Hence, a high fill factor can be maintained when reducing pixel size without changing the basic structure of the pixel, which is advantageous in reducing the pixel size. In order to verify this, the authors have developed an SOI diode IRFPA with the pixel size of 28 μm x 28 μm which is 49% of the previous pixel size (40 μm x 40 μm) and achieved a noise equivalent temperature difference (NETD) of 87 mK. In order to further reduce the pixel size and to improve device sensitivity, we propose a new pixel structure. In this structure, a reflector is fabricated between the infrared absorption structure and support legs. Therefore, the infrared rays which are incident on the support legs, which do not sufficiently function as a reflector, can be used effectively. A new pixel structure with a pixel size of 25 μm x 25 μm was fabricated and realized the thermal conductance of 1.0 x 10-8 W/K and the infrared absorption structure was then verified for its effectiveness.

Paper Details

Date Published: 30 August 2004
PDF: 8 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.548886
Show Author Affiliations
Yasuhiro Kosasayama, Mitsubishi Electric Corp. (Japan)
Takaki Sugino, Mitsubishi Electric Corp. (Japan)
Yoshiyuki Nakaki, Mitsubishi Electric Corp. (Japan)
Yoshio Fujii, Mitsubishi Electric Corp. (Japan)
Hiromoto Inoue, Mitsubishi Electric Corp. (Japan)
Hirofumi Yagi, Mitsubishi Electric Corp. (Japan)
Hisatoshi Hata, Mitsubishi Electric Corp. (Japan)
Masashi Ueno, Mitsubishi Electric Corp. (Japan)
Munehisa Takeda, Mitsubishi Electric Corp. (Japan)
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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