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Influence of a holding beam on the direct modulation behavior of semiconductor lasers
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Paper Abstract

In this paper we theoretically investigate the influence of the injection of a so-called holding beam - a CW beam at the transparency wavelength of the gain medium on the direct modulation properties of semiconductor lasers. Both the small-signal and the large-signal behaviour are investigated. The influence of the holding beam is studied using a simple rate equation model. From the solution of the rate equations it follows that the injection of the holding beam doesn't increase the modulation bandwidth or resonance frequency itself, but that it results in a significant increase of the damping of the relaxation oscillations. Furthermore, it is shown that the chirp (both the adiabatic and dynamic chirp) will be significantly reduced. A few numerical examples - calculated with our CLADISS software - are given to show that the modulation response at not too high bias levels can be significantly improved when a holding beam is applied. For direct, large signal modulation, the injection of a holding beam leads to significantly reduced transient effects and reduced chirping, even at low bias.

Paper Details

Date Published: 1 September 2004
PDF: 7 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.548750
Show Author Affiliations
Bart Moeyersoon, Univ. Gent (Belgium)
IMEC (Belgium)
Geert Morthier, Univ. Gent (Belgium)
IMEC (Belgium)

Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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