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Proceedings Paper

UV-laser-based process for quantum well intermixing of III-V heterostructures
Author(s): Jonathan Genest; Jan J. Dubowski; Vincent Aimez
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Paper Abstract

The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of a quantum well (QW) intermixing effect has been investigated in GaAs/AlGaAs QW heterostructures. The irradiation was carried out in an atmospheric environment with laser pulses of fluence between 60 and 90 mJ/cm2. Following the irradiation, the samples were annealed in a rapid thermal annealing furnace at temperatures ranging from 850 to 925°C. Compared with non-irradiated samples, a strong suppression of the bandgap shift has been observed in all laser irradiated samples. The suppression increased from 5 to 22 nm for samples irradiated with 88 mJ/cm2 pulses and annealed at 850 and 900°C, respectively. This increased thermal stability of excimer laser irradiated samples indicates the potential for developing a process for selective area bandgap engineering of large area GaAs/AlGaAs QW wafers.

Paper Details

Date Published: 18 August 2004
PDF: 8 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.547948
Show Author Affiliations
Jonathan Genest, Univ. de Sherbrooke (Canada)
Jan J. Dubowski, Univ. de Sherbrooke (Canada)
Vincent Aimez, Univ. de Sherbrooke (Canada)

Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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