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Proceedings Paper

Real-time optical information recording on semiconductor nanostructures
Author(s): Peter G. Kasherininov; Andrei V. Kichaev; A. N. Lodygin; Vladimir K. Sokolov
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Paper Abstract

New technique of optical information recording on the semiconductor MIS-structures with a thin nano-dimensional dielectric layer (TI), (M(TI)S) is discussed. This technique provides high speed of optical information recording (up to 106 cycle per second) and also gives an opportunity to design new types of the optoelectronic devices.

Paper Details

Date Published: 19 February 2004
PDF: 10 pages
Proc. SPIE 5381, Lasers for Measurements and Information Transfer 2003, (19 February 2004); doi: 10.1117/12.547764
Show Author Affiliations
Peter G. Kasherininov, A.F. Ioffe Physico-Technical Institute (Russia)
Andrei V. Kichaev, A.F. Ioffe Physico-Technical Institute (Russia)
A. N. Lodygin, A.F. Ioffe Physico-Technical Institute (Russia)
Vladimir K. Sokolov, Baltic State Technical Univ. (Russia)

Published in SPIE Proceedings Vol. 5381:
Lasers for Measurements and Information Transfer 2003
Vadim E. Privalov, Editor(s)

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