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Proceedings Paper

Laser doping for microelectronics and microtechnology
Author(s): Thierry Sarnet; Gurwan Kerrien; Nourdin Yaakoubi; Alain Bosseboeuf; Elisabeth Dufour-Gergam; Dominique Debarre; Jacques Boulmer; Kuniyuki Kakushima; Cyrille Laviron; Miguel Hernandez; Julien Venturini; Tarik Bourouina
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Paper Abstract

The future CMOS generations for microelectronics will require advanced doping techniques capable to realize ultra-shallow, highly-doped junctions with abrupt profiles. Recent experiments have shown the potential capabilities of laser processing of Ultra Shallow Junctions (USJ). According to the International Technology Roadmap for Semiconductors, two laser processes are able to reach ultimate predictions: laser thermal processing or annealing (LTP or LTA) and Gas Immersion Laser Doping (GILD). Both processes are based on rapid melting/solidification of the substrate. During solidification, the liquid silicon, which contains the dopants, is formed epitaxially from the underlying crystalline silicon. In the case of laser thermal annealing dopants are implanted before laser processing. GILD skips the ion-implantation step: in this case dopants are chemisorbed on the Si surface before the laser shot. The dopants are then incorporated and activated during the laser process. Activation is limited to the liquid layer and this chemisorption/laser shot cycle can be repeated until the desired concentration is reached. In this paper, we investigate the possibilities and limitations of the GILD technique for two different substrates: silicon bulk and SOI. We also show some laser doping applications for the fabrication of micro and nanoresonators, widely used in the MEMS Industry.

Paper Details

Date Published: 20 September 2004
PDF: 12 pages
Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.547759
Show Author Affiliations
Thierry Sarnet, IEF, CNRS and Univ. de Paris-Sud (France)
Gurwan Kerrien, IEF, CNRS and Univ. de Paris-Sud (France)
Nourdin Yaakoubi, IEF, CNRS and Univ. de Paris-Sud (France)
Alain Bosseboeuf, IEF, CNRS and Univ. de Paris-Sud (France)
Elisabeth Dufour-Gergam, IEF, CNRS and Univ. de Paris-Sud (France)
Dominique Debarre, IEF, CNRS and Univ. de Paris-Sud (France)
Jacques Boulmer, IEF, CNRS and Univ. de Paris-Sud (France)
Kuniyuki Kakushima, Univ. of Tokyo (Japan)
Cyrille Laviron, CEA-LETI (France)
Miguel Hernandez, SOPRA SA (France)
Julien Venturini, SOPRA SA (France)
Tarik Bourouina, ESIEE (France)

Published in SPIE Proceedings Vol. 5448:
High-Power Laser Ablation V
Claude R. Phipps, Editor(s)

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