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Proceedings Paper

RTS in submicron MOSFETS and quantum dots
Author(s): Josef Sikula; Jan Pavelka; Vlasta Sedlakova; Munecazu Tacano; Sumihisa Hashiguchi; Masato Toita
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Paper Abstract

In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states, too. The current modulation is then represented by a secondary process Y(t). The proposed model can explain some of the complex switching phenomena being measured in nanoscale devices. The quadratic dependence of the capture rate on the current and the noise spectral density dependence on the current and temperature are analysed. It is shown that the occupation time probability density for emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential.

Paper Details

Date Published: 25 May 2004
PDF: 10 pages
Proc. SPIE 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II, (25 May 2004); doi: 10.1117/12.547744
Show Author Affiliations
Josef Sikula, Brno Univ. of Technology (Czech Republic)
Jan Pavelka, Brno Univ. of Technology (Czech Republic)
Vlasta Sedlakova, Brno Univ. of Technology (Czech Republic)
Munecazu Tacano, Meisei Univ. (Japan)
Sumihisa Hashiguchi, Yamanashi Univ. (Japan)
Masato Toita, Asahi Kasei Microsystems (Japan)

Published in SPIE Proceedings Vol. 5472:
Noise and Information in Nanoelectronics, Sensors, and Standards II
Janusz M. Smulko; Yaroslav Blanter; Mark I. Dykman; Laszlo B. Kish, Editor(s)

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