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Proceedings Paper

Noise of optoelectronic coupled devices
Author(s): Alicja Krystyna Konczakowska; Jacek Andrzej Cichosz; Stanislaw Galla; Barbara Małgorzata Stawarz
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Paper Abstract

The three systems for low frequency noise measurements of an optoelectronic coupled device (an infrared emitting diode and a phototransistor) were described. In the system I a low frequency noise of an infrared diode was measured, in the system II a low frequency noise of a phototransistor was measured, in the system III a low frequency noise of an optoelectronic coupled device was measured. The investigations were carried out for optoelectronic coupled devices of CNY type. The results of noise measurements in three systems are compared and a main source of noise in optoelectronic coupled devices was evaluated.

Paper Details

Date Published: 25 May 2004
PDF: 7 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547237
Show Author Affiliations
Alicja Krystyna Konczakowska, Gdansk Univ. of Technology (Poland)
Jacek Andrzej Cichosz, Gdansk Univ. of Technology (Poland)
Stanislaw Galla, Gdansk Univ. of Technology (Poland)
Barbara Małgorzata Stawarz, Gdansk Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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