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Proceedings Paper

Flicker and generation-recombination noise in Hg1-xCdxTe photoconductors based on MBE-grown multilayer structures
Author(s): Galina V. Chekanova; Albina A. Drugova; Alexander V. Kurbatov; Mikhail S. Nikitin
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Paper Abstract

Spectral density of "generation-recombination" noise voltage <δV2gr> ("g-r noise") in Photoconductive Mercury-Cadmium Telluride / Hg1-xCdxTe (PC MCT) infrared radiation detectors with absorber n-Hg1-xCdxTe layer was calculated. Variations of <δV2gr> with doping level (n ≈ Nd), ambient background flux density (Qbgr, Tbgr ≈ 300 K), electrical bias (Vb/Ib) and design of sensitive pixel were analyzed. Spectral density of low-frequency noise as superposition of Flicker-noise "1/f", g-r noise resulting from fluctuations in generation-recombination rates of equilibrium (thermal) charge carriers <δV2gr, th> and excess charge carriers exited by background photons <δV2gr,bgr> and Johnson-Nyquist noise <δV2JN> were examined in Hg1-xCdxTe photoconductors based on MBE-grown multi-layer structures. Noise measurements were performed on Long-Wave (LWIR) PC MCT detectors with responsivity peak wavelength 10 ≤ λp ≤ 12 μm at operating temperature Top ≈ 290-300 K and 78 K. Registration and recording of noise voltage spectral density graphs were performed in frequency range from 6 Hz to 12.5 kHz with resolution equals to 6 Hz. Tested PC MCT detectors show extremely low spectral density of excess Flicker-noise with cut-off frequency (Fco) ranging from 10 to 300 Hz. Measured dependencies of g-r noise voltage spectral density are correlated with calculations.

Paper Details

Date Published: 25 May 2004
PDF: 12 pages
Proc. SPIE 5472, Noise and Information in Nanoelectronics, Sensors, and Standards II, (25 May 2004); doi: 10.1117/12.547209
Show Author Affiliations
Galina V. Chekanova, Federal State Unitary Enterprise ALPHA (Russia)
Albina A. Drugova, Institute of Radio Engineering and Electronics (Russia)
Alexander V. Kurbatov, Federal State Unitary Enterprise ALPHA (Russia)
Mikhail S. Nikitin, Federal State Unitary Enterprise ALPHA (Russia)


Published in SPIE Proceedings Vol. 5472:
Noise and Information in Nanoelectronics, Sensors, and Standards II
Janusz M. Smulko; Yaroslav Blanter; Mark I. Dykman; Laszlo B. Kish, Editor(s)

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